SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To inhibit a current collapse phenomenon, characteristic variation in a high-temperature current test and metal diffusion.SOLUTION: A semiconductor device comprises: a gate electrode 20 formed on a nitride semiconductor layer; a source electrode 22 and a drain electrode 24 which sandwich the gate electrode; a first silicon nitride film 32 which covers the gate electrode and the nitride semiconductor layer and which has a silicon composition ratio to nitrogen of larger than 0.75 and has a tensile stress in a simple substance; and a second silicon nitride film 34 which is formed on the first silicon nitride film and which has a silicon composition ratio to nitrogen of larger than 0.75 and has a tensile stress in a simple substance. A layered structure of the first silicon nitride film and the second silicon nitride film has a tensile stress as a whole.