发明名称 NONVOLATILE MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile memory device or the like that allows values of latch circuits holding values of memory cells that are difficult to be inspected in a conventional nonvolatile memory device to be inspected without separately providing dedicated input/output circuits.SOLUTION: A nonvolatile memory device in which memory cells MC including floating gates FG are arranged in an array in row and column directions outputs a value of a memory cell MC selected by row and column addresses from a first output circuit 40. The nonvolatile memory device includes: a second output circuit 20 including bistable circuits 22 that are electrically connected to the memory cells MC via switches SW capable of being controlled by the row address, hold and output the value of the memory cell MC selected by the row address; and cells for inspection that are arranged in the array such that each cell makes a pair with at least one of the memory cells MC and output the value held by the bistable circuits 22 electrically connected thereto from the first output circuit 40 when being selected by row and column addresses.
申请公布号 JP2013218762(A) 申请公布日期 2013.10.24
申请号 JP20120089361 申请日期 2012.04.10
申请人 SEIKO EPSON CORP 发明人 TOKUDA YASUNOBU
分类号 G11C29/24;G11C16/02;G11C16/04 主分类号 G11C29/24
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