发明名称 TMR Device with Low Magnetoresistive Free Layer
摘要 A high performance TMR sensor is fabricated by employing a free layer with a trilayer configuration represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA<3 ohm-um2. In bilayer or trilayer embodiments, magnetostriction (lambda) between -5×10-6 and 5×10-6 is achieved by combining CoB (-lambda) and one or more layers having a positive lambda.
申请公布号 US2013277780(A1) 申请公布日期 2013.10.24
申请号 US201313924758 申请日期 2013.06.24
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 WANG HUI-CHUAN;ZHAO TONG;LI MIN;ZHANG KUNLIANG
分类号 H01L43/10 主分类号 H01L43/10
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