| 摘要 |
This semiconductor device is provided with, for instance: a substrate (12) that includes a circuit element; a chip leading out electrode (18), which is electrically connected to the circuit element, and which is formed on the surface of the substrate; a passivation layer (20) that covers the chip leading out electrode; an insulating resin (30), which covers the passivation layer (20), and which has a first opening formed therein; metal wiring (52), which is formed in the first opening, and which is electrically connected to the chip leading out electrode; and an external terminal (70), which is formed on the surface of the metal wiring (52). The first opening includes a first region (52A) having a first depth, and a second region (52B) having a second depth, which is less than the first depth, and at which the photosensitive insulating resin (30) is left, and the metal wiring (52) is formed in the first and the second regions. |
