| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which interconnections of a low potential region and high potential do not cross each other and which exhibits an excellent voltage withstanding performance.SOLUTION: A semiconductor device of a present embodiment comprises: a logic circuit (501); a low voltage side power element (503); a low voltage side drive circuit (502) for driving the low voltage side power element according to a control signal from the logic circuit; a high-voltage side power element (506); a high-voltage side drive circuit (505) to which a control signal from the logic circuit is input via a level shift circuit, for driving the high-voltage side power element (506); a first multiple trench isolation region (508) for isolating a high-potential island including the high-voltage side power element; and a second multiple trench isolation region (508A) for isolating high-voltage wiring which is formed inside the high-potential island and to which a high voltage is applied. |
