发明名称 |
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL, AND WAFER |
摘要 |
P-type silicon single crystals from which wafers having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained, are manufactured by the Czochralski method from an initial silicon melt in which boron and phosphorus are present, the boron concentration is not higher than 4E14 atoms/cm3 and the ratio of the phosphorus concentration to the boron concentration is not lower than 0.42 and not higher than 0.50. |
申请公布号 |
US2013277809(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201113977495 |
申请日期 |
2011.11.10 |
申请人 |
NAKAI KATSUHIKO;OHKUBO MASAMICHI;SILTRONIC AG |
发明人 |
NAKAI KATSUHIKO;OHKUBO MASAMICHI |
分类号 |
H01L29/04;H01L21/02 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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