METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

Embodiments of the present invention provide methods of fabricating features of a semiconductor device array, the method including patterning a dielectric layer deposited on a conductive carrier, wherein patterning comprises forming a trench pattern defining at least one device contact, electrodepositing metal into the patterned trenches, transferring the dielectric layer and the electrodeposited metal to a substrate and removing the conductive carrier, and the method further comprising lithographically fabricating one or more further features of the semiconductor device array overlying the dielectric layer and electrodeposited metal.