发明名称 |
METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING PATTERN, SOLAR CELL AND POSITIVE RESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To improve removability of a resist film in a recessed part of a support body.SOLUTION: A method for forming a resist pattern includes steps of: applying the following positive resist composition on a support body including a solar cell substrate to form a resist film; selectively irradiating the resist film with light to expose; and developing the exposed resist film with an alkali solution to remove the exposed part. The positive resist composition comprises a novolac resin (A) and a photosensitive agent (B) including an ester compound of phenols (B1) having a tris(hydroxyphenyl)methane skeleton with a quinone diazide group-containing sulfonyl compound (B2), and shows 10% or more transmittance for light at a wavelength of 365 nm in a resist film of the composition having 3 μm film thickness. |
申请公布号 |
JP2013218269(A) |
申请公布日期 |
2013.10.24 |
申请号 |
JP20120249630 |
申请日期 |
2012.11.13 |
申请人 |
TOKYO OHKA KOGYO CO LTD |
发明人 |
TOMITA HIROAKI;YOSHII YASUHIRO;HIRAI TAKAAKI |
分类号 |
G03F7/022;H01L31/04 |
主分类号 |
G03F7/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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