| 摘要 |
The invention relates to a vertical organic transistor on a substrate having an electrode (121), a counter electrode (123) and a layer arrangement which is arranged between the electrode (121) and the counter electrode (123), wherein the layer arrangement is formed with the following layers: a central electrode (122), an organic layer (131) made up of organic semiconductor material which is arranged between the central electrode (122) and the electrode (121), a further organic layer (132) made up of organic semiconductor material, which is arranged between the central electrode (122) and the counter electrode (123), and a doping layer (141) which is arranged between the central electrode (122) and the electrode (121). Furthermore, the invention relates to a method for producing a vertical organic transistor.
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