发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE |
摘要 |
A manufacturing method for a semiconductor device having a metal gate is provided. First and second gate trenches are respectively formed in first and second semiconductor devices. A work-function metal layer is formed in the first and second gate trenches. A shielding layer is formed on the substrate. A first removing step is performed, so that the remaining shielding layer is at bottom of the second gate trench and fills up the first gate trench. A second removing step is performed, so that the remaining shielding layer is at bottom of the first gate trench to expose the work-function metal layer at sidewall of the first gate trench and in the second gate trench. The work-function metal layer not covered by the remaining shielding layer is removed, so that the remaining work-function metal layer is only at bottom of the first gate trench. The remaining shielding layer is removed.
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申请公布号 |
US2013280900(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201213454337 |
申请日期 |
2012.04.24 |
申请人 |
LAI CHIEN-MING;HUANG RAI-MIN;HUANG TONG-JYUN;HSU CHE-HUA;CHEN YI-WEN;UNITED MICROELECTRONICS CORP. |
发明人 |
LAI CHIEN-MING;HUANG RAI-MIN;HUANG TONG-JYUN;HSU CHE-HUA;CHEN YI-WEN |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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