| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of forming and laminating plasma CVD layers of a uniform thickness on a surface of a substrate while advantageously suppressing deposition of the plasma CVD layers onto articles other than the substrate surface.SOLUTION: A plasma CVD apparatus is constructed by: arranging an annular or cylindrical coil 76 in a reaction chamber 22 so that plasma, which is blown from a plasma generating part 24 through an outlet 56 into the reaction chamber 22, passes through an inner hole 78; supporting the coil 76 by a supporting means 68 so as to enable tilting of the coil 76 for tilting a central axis of the coil 76 in a given direction at a given angle while maintaining a state such that the plasma can pass through the inner hole 78 of the coil 76; and establishing a tilting means 86 for tilting the coil 76 and a power supply means 77 for supplying power to the coil 76. |
