发明名称 Methods of Processing Semiconductor Substrates, Electrostatic Carriers for Retaining Substrates for Processing, and Assemblies Comprising Electrostatic Carriers Having Substrates Electrostatically Bonded Thereto
摘要 A method of processing a substrate includes physically contacting an exposed conductive electrode of an electrostatic carrier with a conductor to electrostatically bond a substrate to the electrostatic carrier. The conductor is removed from physically contacting the exposed conductive electrode. Dielectric material is applied over the conductive electrode. The substrate is treated while it is electrostatically bonded to the electrostatic carrier. In one embodiment, a conductor is forced through dielectric material that is received over a conductive electrode of an electrostatic carrier to physically contact the conductor with the conductive electrode to electrostatically bond a substrate to the electrostatic carrier. After removing the conductor from the dielectric material, the substrate is treated while it is electrostatically bonded to the electrostatic carrier. Electrostatic carriers for retaining substrates for processing, and such assemblies, are also disclosed.
申请公布号 US2013276985(A1) 申请公布日期 2013.10.24
申请号 US201313921022 申请日期 2013.06.18
申请人 MICRON TECHNOLOGY, INC. 发明人 RAY DEWALI;FARNWORTH WARREN M.;KIRBY KYLE K.
分类号 H01L21/683 主分类号 H01L21/683
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