发明名称 |
FARBRICATION OF A LOCALIZED THICK BOX WITH PLANAR OXIDE/SOI INTERFACE ON BULK SILICON SUBSTRATE FOR SILICON PHOTONICS INTEGRATION |
摘要 |
Line trenches are formed in a stack of a bulk semiconductor substrate and an oxygen-impermeable layer such that the depth of the trenches in the bulk semiconductor substrate is greater than the lateral spacing between a pair of adjacently located line trenches. Oxygen-impermeable spacers are formed on sidewalls of the line trenches. An isotropic etch, either alone or in combination with oxidation, removes a semiconductor material from below the oxygen-impermeable spacers to expand the lateral extent of expanded-bottom portions of the line trenches, and to reduce the lateral spacing between adjacent expanded-bottom portions. The semiconductor material around the bottom portions is oxidized to form a semiconductor oxide portion that underlies multiple oxygen-impermeable spacers. Semiconductor-on-insulator (SOI) portions are formed above the semiconductor oxide portion and within the bulk semiconductor substrate. |
申请公布号 |
US2013277795(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201213451141 |
申请日期 |
2012.04.19 |
申请人 |
ASSEFA SOLOMON;GREEN WILLIAM M. J.;KHATER MARWAN H.;VLASOV YURII A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASSEFA SOLOMON;GREEN WILLIAM M. J.;KHATER MARWAN H.;VLASOV YURII A. |
分类号 |
H01L29/00;H01L21/762 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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