| 摘要 |
<p>A layer including one metal from titanium, tungsten, molybdenum, and chromium is formed on the obverse surface of a SiC substrate (11) and heated, whereby a Schottky electrode (16) is formed on the SiC substrate (11). A surface electrode (17) is formed on the surface of the Schottky electrode (16) from aluminum or aluminum containing silicon. When the surface electrode (17) is formed, heating is performed at 100°C to 500°C, whereby the concave/convex features on the Schottky electrode (16) are covered by the surface electrode (17) in a satisfactory manner, and the reflectivity of the surface electrode (17) becomes suitable for image recognition by an automatic wire bonding device. It is thereby possible to form a surface electrode that covers the concave/convex features of the Schottky contact in a satisfactory manner and has the optimum reflectivity for image recognition such as for positioning.</p> |
