| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing apparatus and manufacturing method of an SiC single crystal in which temperature distribution of the SiC single crystal surface can be made more uniform, and deterioration of crystal quality can be controlled when growing up the SiC single crystal to be long.SOLUTION: A heating form by a second heating device 13 is changed along with growth of an SiC single crystal 20. Concretely, the SiC single crystal 20 is made longer, an outer peripheral surface is heated more, thereby driving power is increased from a lower side in sequence for each of steps 13a-13c, and a part corresponding to a place in which the SiC single crystal 20 exists is heated in sequence in each of the steps 13a-13c. As a result, temperature distribution can be almost uniform in a longitudinal direction of the SiC single crystal 20, and deterioration of crystal quality of the SiC single crystal 20 can be controlled. |
