| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-quality nitride light-emitting element and a manufacturing method of the same.SOLUTION: A method of growing a single crystal nitride semiconductor substrate comprises: laminating a seed substance layer 110 on a top face of a first substrate 100; growing a multifunctional substrate 120 from a top face of the seed substance layer 110; forming a multilayer structure 130 which is composed of a nitride buffer layer and single crystal nitride thin film layers laminated on the nitride buffer layer on the multifunctional substrate 120 by MOCVD; removing the seed substance layer 110 and the first substrate 100 by wet etching or dry etching; and performing a heat treatment for improving crystallinity of the multifunctional substrate 120 and the single crystal nitride thin film layer which are manufactured through the processes. |
