METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To completely recover Vth of a gate insulating film to Vth of a gate oxide film.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: preparing a silicon substrate; ion-implanting fluorine into the silicon substrate; forming a gate insulating film containing a nitride layer on a surface of the silicon substrate; post-annealing the silicon substrate in a nitrogen atmosphere: and annealing the silicon substrate in a hydrogen atmosphere.