发明名称 PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD
摘要 A photoresist composition includes a polymer component that includes a first structural unit represented by the formula (1) and a second structural unit represented by the formula (2), an acid generator, and a compound represented by the formula (3). The first structural unit and the second structural unit are included in an identical polymer, or different polymers. R1 is hydrogen atom, fluorine atom, etc., R2 and R3 are independently hydrogen atom, fluorine atom, etc., a is an integer from 1 to 6, R4 and R5 independently hydrogen atom, fluorine atom, etc., R6 is hydrogen atom, fluorine atom, etc., R7 and R8 are each independently alkyl group having 1 to 4 carbon atoms, etc., R9 is alkyl group having 1 to 4 carbon atoms, etc., R10 is hydrogen atom, etc., A- is -N--SO2-Ra, etc., and X+ is onium cation.
申请公布号 US2013280657(A1) 申请公布日期 2013.10.24
申请号 US201313852147 申请日期 2013.03.28
申请人 JSR CORPORATION 发明人 KASAHARA KAZUKI;IKEDA NORIHIKO
分类号 G03F7/004;G03F7/027;G03F7/20 主分类号 G03F7/004
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