| 摘要 |
A mask for use in a lithographic apparatus comprises a substrate, a reflective first multilayer structure deposited on the substrate, a pattern formed in the multilayer reflective structure either by depositing absorber material or by local deformation of the reflective structure, the top surface of the pattern being generally at the same height from the substrate as the top surface of the multilayer structure, and a second structure, preferably a multilayer structure, provided above the top surface of the first reflective structure and the top surface of the pattern, wherein the second structure has a planar top surface and wherein the second structure is chosen so as to minimize the transmission through the second structure of light of a given wavelength at a given angle of incidence and a given polarization such that inspection of the surface of the mask by light scattering can be employed. |
