| 摘要 |
A semiconductor memory device or a semiconductor device which has high reading accuracy is provided. A bit line, a word line, a memory cell placed in an intersection portion of the bit line and the word line, and a reading circuit electrically connected to the bit line are provided. The memory cell includes a first transistor and an antifuse. The reading circuit includes a pre-charge circuit, a clocked inverter, and a switch. The pre-charge circuit includes a second transistor and a NAND circuit. The semiconductor memory device includes transistor in each of which an oxide semiconductor is used in a channel formation region, as the first transistor and the second transistor. |
