HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS

摘要

PURPOSE: A high temperature atomic layer deposition method of a silicon oxide thin film is provided to deposit a silicon oxide material or a thin film at a high temperature by using an atomic layer deposition (ALD) or an ALD-similar process. CONSTITUTION: A high temperature atomic layer deposition method of a silicon oxide thin film comprises the following steps. A substrate is provided for a reactor. At least one silicon precursor is introduced inside the reactor. The reactor is purged by a purge gas. An oxygen supply source is introduced inside the reactor. The reactor is purged by the purge gas. The step of introducing the silicon or purging the reactor with the purge gas is repeated until the desired thickness of a silicon oxide is deposited. The high temperature atomic layer deposition method is performed at one temperature in the range of 500-800°C, and under one pressure condition in the range of 50 mTorr -60 Torr. [Reference numerals] (AA) Deposition speed (A/cycle); (BB) Temperature (°C)