| 摘要 |
PURPOSE: A method for forming a through silicon via is provided to obtain a stable structure by easily controlling the depth and the diameter of a via hole. CONSTITUTION: A semiconductor substrate (100) is prepared. An inner via hole (102) is formed in the semiconductor substrate. An anisotropic etching process is used in a via hole formation process. A second via hole (110) is formed by a wet etching process. The inner via hole is connected with the second via hole. |
