| 摘要 |
<p>A semiconductor structure with dispersedly arranged active region trenches is provided. The semiconductor structure comprises a semiconductor substrate, an epitaxial layer, and an active region dielectric layer. The semiconductor substrate is doped with impurities of a first conductive type having a first impurity concentration. The epitaxial layer is doped with impurities of the first conductive type having a second impurity concentration and is formed on the semiconductor substrate. The epitaxial layer has a plurality of active region trenches and arranged in a dispersed manner. The active region dielectric layer covers a bottom and a sidewall of the active region trenches. The active region trenches have an opening in a tetragonal shape on a surface of the epitaxial layer, and the first impurity concentration is greater than the second impurity concentration.</p> |
