| 发明名称 |
Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer |
| 摘要 |
<p>A layer (209) including modified cadmium telluride and unmodified cadmium telluride disposed within the cadmium telluride layer. The modified area (513) includes a concentration of telluride that is greater than the concentration of telluride in the unmodified cadmium telluride area. The modified area (513) also includes a hexagonal close packed crystal structure. A method for modifying a cadmium telluride layer and a thin film device are also disclosed.
</p> |
| 申请公布号 |
EP2398045(A3) |
申请公布日期 |
2013.10.23 |
| 申请号 |
EP20110169723 |
申请日期 |
2011.06.14 |
| 申请人 |
PRIMESTAR SOLAR, INC |
发明人 |
FREY, JONATHAN M. |
| 分类号 |
H01L21/36;H01L21/02;H01L21/428;H01L29/22;H01L31/0224;H01L31/0296;H01L31/18 |
主分类号 |
H01L21/36 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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