| 摘要 |
IDDQ testing of CMOS devices. An embodiment of a method includes applying a test pattern of inputs to a device, the device including one or more CMOS (Complementary Metal-Oxide Semiconductor) transistors, and obtaining current measurements for the device, each of the current measurements being a measurement of a current after applying an input of the test pattern to the device. A filter function is applied to the current measurements, applying the filter function including separating defect current values from the current measurements. The method further includes determining whether a defect is present in the device based at least in part on a comparison of the defect current values with a threshold value. |
