| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems on the technique for improving performances of microphotofabrication using far ultraviolet light, especially ArF excimer laser light of 193 nm wavelength, in particular, to provide a negative resist composition which avoids pattern collapse even in fine pattern formation and exhibits good resolution. <P>SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound having two or more vinyl structures in a molecule and (C) a photo-cationic polymerization initiator. <P>COPYRIGHT: (C)2009,JPO&INPIT |
