发明名称 Power amplifier and semiconductor integrated circuit
摘要 In general, according to one embodiment, a power amplifier includes an envelope detector, a limiter, and a combiner. The envelope detector is configured to sense an envelope component of an input signal. The limiter includes a PMOS (Positive channel Metal Oxide Semiconductor) transistor and an NMOS (Negative channel Metal Oxide Semiconductor) transistor. The PMOS transistor is configured to sense a phase component of the input signal. The phase component has a second-order distortion controlled within a predetermined range with respect to the input signal. The NMOS transistor is configured to sense a phase component of the input signal. The phase component has the same second-order distortion as the phase component sensed by the PMOS transistor. The combiner is configured to combine the envelope component sensed by the envelope detector and the phase component sensed by the limiter to generate an output signal.
申请公布号 US8565341(B2) 申请公布日期 2013.10.22
申请号 US20100886699 申请日期 2010.09.21
申请人 KOUSAI SHOUHEI;KABUSHIKI KAISHA TOSHIBA 发明人 KOUSAI SHOUHEI
分类号 H04K1/02 主分类号 H04K1/02
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