发明名称 Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
摘要 In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.
申请公布号 US8563085(B2) 申请公布日期 2013.10.22
申请号 US201113035659 申请日期 2011.02.25
申请人 CHO YOUN-JOUNG;KIM YOUN-SOO;CHO KYU-HO;LEE JUNG-HO;CHOI JAE-HYOUNG;RYU SEUNG-MIN;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO YOUN-JOUNG;KIM YOUN-SOO;CHO KYU-HO;LEE JUNG-HO;CHOI JAE-HYOUNG;RYU SEUNG-MIN
分类号 C23C16/00 主分类号 C23C16/00
代理机构 代理人
主权项
地址