发明名称 |
Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same |
摘要 |
Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.
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申请公布号 |
US8564095(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US201113021910 |
申请日期 |
2011.02.07 |
申请人 |
HUANG TSAI-YU;BHAT VISHWANATH;ANTONOV VASSIL;HSIEH CHUN-I;CARLSON CHRIS;MICRON TECHNOLOGY, INC. |
发明人 |
HUANG TSAI-YU;BHAT VISHWANATH;ANTONOV VASSIL;HSIEH CHUN-I;CARLSON CHRIS |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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