发明名称 |
Solid-state imaging device and method for manufacturing the same |
摘要 |
A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer.
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申请公布号 |
US8564033(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US20080345876 |
申请日期 |
2008.12.30 |
申请人 |
HAYASHI TOSHIHIKO;KUDOH YOSHIHARU;SONY CORPORATION |
发明人 |
HAYASHI TOSHIHIKO;KUDOH YOSHIHARU |
分类号 |
H01L31/0216;H01L27/14;H01L27/146;H04N5/335;H04N5/369 |
主分类号 |
H01L31/0216 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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