发明名称 |
Method of pitch dimension shrinkage |
摘要 |
An embodiment of the disclosure includes a method of pitch reduction. A substrate is provided. A first material layer is formed over the substrate. A second material layer is formed on the first material layer. A hardmask layer is formed on the second material layer. A first imaging layer is formed on the hardmask layer. The first imaging layer is patterned to form a plurality of first features over the hardmask layer. The hardmask layer is etched utilizing the first imaging layer as a mask to form the first features in the hardmask layer. The first imaging layer is removed to expose the etched hardmask layer and a portion of a top surface of the second material layer. A second imaging layer is formed and the process is repeated, such that first and second features are alternating with a pitch substantially half the original pitch.
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申请公布号 |
US8563439(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US20100842162 |
申请日期 |
2010.07.23 |
申请人 |
HUANG MING-JIE;CHEN CHEN-PING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG MING-JIE;CHEN CHEN-PING |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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