| 摘要 |
A manufacturing method of a semiconductor device of which cost can be suppressed by using a nanoimprinting method is provided. In the invention, a gate insulating film, a conductive film, and a resist are formed in sequence over a semiconductor film and a resist is hardened while pressing a mold formed with a pattern to the resist. Therefore, the pattern is transferred to the resist, the surface of the resist to which the pattern is transferred is ashed until a part of the conductive film is exposed, the resist having the ashed surface is used a mask, and the conductive film is etched.
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