发明名称 |
Memory system and method of operating the same |
摘要 |
A memory system includes a flash memory device including a first memory block group on which a least significant bit (LSB) program operation has been performed and a program operation on another bit has not been performed and a second memory block group on which both the LSB program operation and a most significant bit (MSB) program operation have been performed and a memory controller configured to check which of the first and second memory block groups a memory block selected for an LSB data read operation belongs to and set a level of a read voltage for the LSB data read operation of the selected memory block.
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申请公布号 |
US8565022(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US201113178880 |
申请日期 |
2011.07.08 |
申请人 |
SHIN TAI SIK;KIM DUCK JU;HAM DONG HYEON;HYNIX SEMICONDUCTOR INC. |
发明人 |
SHIN TAI SIK;KIM DUCK JU;HAM DONG HYEON |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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