发明名称 |
Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces |
摘要 |
A method and apparatus is disclosed for using below deep ultra-violet (DUV) wavelength reflectometry for measuring properties of diffracting and/or scattering structures on semiconductor work-pieces is disclosed. The system can use polarized light in any incidence configuration, but one technique disclosed herein advantageously uses un-polarized light in a normal incidence configuration. The system thus provides enhanced optical measurement capabilities using below deep ultra-violet (DUV) radiation, while maintaining a small optical module that is easily integrated into other process tools. A further refinement utilizes an r-theta stage to further reduce the footprint.
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申请公布号 |
US8564780(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US20100844851 |
申请日期 |
2010.07.28 |
申请人 |
WALSH PHILLIP;HARRISON DALE;JORDAN VALLEY SEMICONDUCTORS LTD. |
发明人 |
WALSH PHILLIP;HARRISON DALE |
分类号 |
G01N21/55 |
主分类号 |
G01N21/55 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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