Solid-state imaging device having transimpedance amplifier

摘要

A solid-state imaging device 1 includes photodiodes PD1 to PDN, charge-voltage converting circuits 101 to 10N, pre-holding circuits 201 to 20N, a transimpedance amplifier 30, a peak holding circuit 50, and a post-holding circuit 60. The charge-voltage converting circuit 10n inputs charges generated at the photodiode PDn and outputs a voltage value corresponding to the input charge quantity. The pre-holding circuit 20n holds the output voltage value from the charge-voltage converting circuit 10n and outputs the output voltage value as a current. The transimpedance amplifier 30 inputs voltage values successively output form the pre-holding circuits 201 to 20N as currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuit 50 holds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier 30.