| 摘要 |
PURPOSE: A polysilicon laminated body and a method for controlling leakage current in the same are provided to control leakage current by using implanted ions for adjusting the potential barrier of a polysilicon layer. CONSTITUTION: A first insulation layer (100) is formed on a high-concentration ion layer (401). A second insulation layer (300) is formed under a high-concentration ion layer (402). A polysilicon layer (200) is arranged between the first insulation layer and the second insulation layer. The polycrystalline silicon layer has at least one grain boundary. The high-concentration ion layers are formed by implanting ions from top to bottom. [Reference numerals] (AA) Depth; (BB) Ion concentration |
