发明名称 |
Conductive metal oxide structures in non volatile re writable memory devices |
摘要 |
A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).
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申请公布号 |
US8565006(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US201213719106 |
申请日期 |
2012.12.18 |
申请人 |
SCHLOSS LAWRENCE;BREWER JULIE CASPERSON;KINNEY WAYNE;MEYER RENE;UNITY SEMICONDUCTOR CORPORATION |
发明人 |
SCHLOSS LAWRENCE;BREWER JULIE CASPERSON;KINNEY WAYNE;MEYER RENE |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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