发明名称 Contacts for semiconductor devices
摘要 A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.
申请公布号 US8564041(B2) 申请公布日期 2013.10.22
申请号 US20060551532 申请日期 2006.10.20
申请人 HUI ANGELA T.;LI WENMEI;NGO MINH VAN;JOSHI AMOL RAMESH;CHANG KUO-TUNG;ADVANCED MICRO DEVICES, INC.;SPANSION LLC 发明人 HUI ANGELA T.;LI WENMEI;NGO MINH VAN;JOSHI AMOL RAMESH;CHANG KUO-TUNG
分类号 H01L27/108 主分类号 H01L27/108
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