发明名称 Method to increase field effect mobility of donor-acceptor semiconductors
摘要 A method including activating an electronic device, such as an organic thin film transistor, by exposing the device to non-ionizing radiation while the device is under an electrical field. Activation of the transistor increases the field effect mobility of the transistor.
申请公布号 US8563851(B2) 申请公布日期 2013.10.22
申请号 US201213424221 申请日期 2012.03.19
申请人 WU YILIANG;WIGGLESWORTH ANTHONY J.;LIU PING;XEROX CORPORATION 发明人 WU YILIANG;WIGGLESWORTH ANTHONY J.;LIU PING
分类号 H01L31/00 主分类号 H01L31/00
代理机构 代理人
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