| 发明名称 |
Controlling the recombination rate in a bipolar semiconductor component |
| 摘要 |
Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.
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| 申请公布号 |
US8564098(B2) |
申请公布日期 |
2013.10.22 |
| 申请号 |
US20100718381 |
申请日期 |
2010.03.05 |
| 申请人 |
MAUDER ANTON;HIRLER FRANZ;PFIRSCH FRANK;SCHULZE HANS-JOACHIM;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
MAUDER ANTON;HIRLER FRANZ;PFIRSCH FRANK;SCHULZE HANS-JOACHIM |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
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