发明名称 |
Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures |
摘要 |
Metal-insulator-metal capacitors with a bottom electrode including at least two portions of a metal nitride material. At least one of the portions of the metal nitride material includes a different material than another portion. Interconnects including at least two portions of a metal nitride material are also disclosed, at least one of the portions of the metal nitride material are formed from a different material than another portion of the metal nitride material. Methods for fabricating such MIM capacitors and interconnects are also disclosed, as are semiconductor devices including such MIM capacitors and interconnects.
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申请公布号 |
US8564094(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US20090556266 |
申请日期 |
2009.09.09 |
申请人 |
HU YONGJUN JEFF;MICRON TECHNOLOGY, INC. |
发明人 |
HU YONGJUN JEFF |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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