发明名称 |
Ultraviolet light emitting diode/laser diode with nested superlattice |
摘要 |
A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al1-x-yInyGaxN wherein 0@x@alpha and 0@y@1 with x increasing with distance from said substrate. An ultraviolet light-emitting structure on the template has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein alpha@x; a light emitting quantum well region above the first layer comprising Al1-x-yInyGaxN wherein alpha@x@b; and a second layer over the light emitting quantum well with a second conductivity comprising Al1-x-yInyGaxN wherein b@x. The light emitting device also has a first electrical contact in electrical connection with the first layer, a second electrical contact in electrical connection with the second layer; and the device emits ultraviolet light.
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申请公布号 |
US8563995(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US20090934651 |
申请日期 |
2009.03.27 |
申请人 |
KHAN ASIF;FAREED QHALID;NITEK, INC. |
发明人 |
KHAN ASIF;FAREED QHALID |
分类号 |
H01L29/20;H01L33/00;H01L33/12;H01L33/32 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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