发明名称 Ultraviolet light emitting diode/laser diode with nested superlattice
摘要 A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al1-x-yInyGaxN wherein 0@x@alpha and 0@y@1 with x increasing with distance from said substrate. An ultraviolet light-emitting structure on the template has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein alpha@x; a light emitting quantum well region above the first layer comprising Al1-x-yInyGaxN wherein alpha@x@b; and a second layer over the light emitting quantum well with a second conductivity comprising Al1-x-yInyGaxN wherein b@x. The light emitting device also has a first electrical contact in electrical connection with the first layer, a second electrical contact in electrical connection with the second layer; and the device emits ultraviolet light.
申请公布号 US8563995(B2) 申请公布日期 2013.10.22
申请号 US20090934651 申请日期 2009.03.27
申请人 KHAN ASIF;FAREED QHALID;NITEK, INC. 发明人 KHAN ASIF;FAREED QHALID
分类号 H01L29/20;H01L33/00;H01L33/12;H01L33/32 主分类号 H01L29/20
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