| 摘要 |
PURPOSE: An apparatus for SRAM cells is provided to generate many layout margins by forming word line strap structures that are arranged by an alternative method. CONSTITUTION: A first word line is formed in a first interconnection layer. A first VSS line (VSS1), a first bit line (BL), a power line (VCC), a second bit line (BLB), and a second VSS line (VSS2) are formed in a second interconnection layer. A second word line is formed in a third interconnection layer. A word line strap structure is formed between the power line and the second bit line. The word line strap structure includes a first via, a metal line, and a second via. [Reference numerals] (AA) Cell 1-4 (MX); (BB) Cell 1-3 (RO); (CC) Cell 1-2 (MX); (DD) Cell 1-1 (RO); (EE) X-pitch; (FF) Line-4; (GG) Line-3; (HH) Line-2; (II) Y-pitch; (JJ) Line-1 |
