发明名称 Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same
摘要 A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.
申请公布号 US8563977(B2) 申请公布日期 2013.10.22
申请号 US20080672103 申请日期 2008.09.18
申请人 SHIMADA MIKIO;HAYASHI RYO;KUMOMI HIDEYA;CANON KABUSHIKI KAISHA 发明人 SHIMADA MIKIO;HAYASHI RYO;KUMOMI HIDEYA
分类号 H01L33/16;H01L33/00 主分类号 H01L33/16
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