CMOS with channel P-FinFET and channel N-FinFET having different crystalline orientations and parallel fins

摘要

A method for fabricating an integrated circuit with at least one p-FinFET device and at least one n-FinFET device. The method includes bonding a first silicon layer having a first crystalline orientation to a second silicon layer having a second crystalline orientation that is different from the first crystalline orientation. A first plurality of fins and a second plurality of fins are created. A spacer is formed around each fin in the first plurality of fins and second plurality of fins. A set of regions of the second layer between each fin in the first plurality of fins and the second plurality of fins are recessed to form a base with exposed sidewalls under each fin in the first plurality of fins and the second plurality of fins. The base under each fin and a set of exposed regions between each fin is oxidized.