发明名称 High power semiconductor laser diodes
摘要 A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEbar on a submount having a second coefficient CTEsub and a cooler having a third coefficient CTEcool. The submount/cooler assembly shows an effective fourth coefficient CTEeff differing from CTEbar. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEeff is selected to be either lower than both CTEbar and CTEcool or is selected to be between CTEbar and CTEcool. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 mum thickness and a Mo layer of 100-400 mum thickness, or a single material with a varying CTEsub. Both result in a CTEsub varying across the submount's thickness.
申请公布号 US8565276(B2) 申请公布日期 2013.10.22
申请号 US201213686840 申请日期 2012.11.27
申请人 OCLARO TECHNOLOGY LIMITED 发明人 KREJCI MARTIN;LICHTENSTEIN NORBERT;WEISS STEFAN;BOUCART JULIEN;TODT RENE
分类号 H01S3/04 主分类号 H01S3/04
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