| 摘要 |
A trench MOSFET comprising a plurality of transistor cells, multiple trenched floating gates in termination area is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in active area. In some preferred embodiments, the trench MOSFET further comprises a gate metal runner surrounding outside the source metal and extending to the gate metal pad. Furthermore, the termination area further comprises an EPR surrounding outside the trenched floating gates.
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