发明名称 |
Shielded gate trench MOSFET device and fabrication |
摘要 |
A semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.
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申请公布号 |
US8564055(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US201213456406 |
申请日期 |
2012.04.26 |
申请人 |
CHEN JOHN;LEE IL KWAN;CHANG HONG;LI WENJUN;BHALLA ANUP;YILMAZ HAMZA;ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED |
发明人 |
CHEN JOHN;LEE IL KWAN;CHANG HONG;LI WENJUN;BHALLA ANUP;YILMAZ HAMZA |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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