发明名称 |
Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron |
摘要 |
A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.
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申请公布号 |
US8562798(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US20050222231 |
申请日期 |
2005.09.07 |
申请人 |
BROWN KARL M.;PIPITONE JOHN;MEHTA VINEET;APPLIED MATERIALS, INC. |
发明人 |
BROWN KARL M.;PIPITONE JOHN;MEHTA VINEET |
分类号 |
C23C14/00;C23C14/32;C25B9/00;C25B11/00;C25B13/00;H01B11/02;H01B11/06;H02G3/04;H05K1/09 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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