| 摘要 |
PURPOSE: A method for manufacturing a free standing GaN wafer without a bowing property is provided to improve the quality of a substrate by reducing the generation of defects such as pits. CONSTITUTION: GaCl gas and NH3 gas are supplied into a heated reactor with a predetermined rate. A GaN crystal is grown on the substrate within the reactor for a period of time. After the period of time, the amount of the NH3 gas supplied decrease at a predetermined rate to the amount of the NH3 gas initially supplied (S50). Nitrogen vacancies of the GaN crystal increase as the amount of the NH3 gas supplied decreases. The amount of the NH3 gas supplies decreases to 0.1-0.9% of the amount of the NH3 gas initially supplied. [Reference numerals] (AA) Start; (BB) No; (CC) Yes; (DD) End; (S10) Insert a substrate; (S20) Perform a nitrification process; (S30) Grow a GaN back film; (S40) Predetermined time ?; (S50) Reduce the amount of a NH_3 supply; (S60) Separate and process a GaN individual substrate |
